Datasheet PHT6N06LT.135 - NXP MOSFET, N, REEL 4K — Ficha de datos

Descripción detallada

Manufacturer: NXP

Description: MOSFET, N, REEL 4K

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Docket:
Philips Semiconductors
Product specification
TrenchMOSTM transistor Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting.

The device features very low on-state resistance and has integral zener diodes giving ESD protection. It is intended for use in DC-DC converters and general purpose switching applications.

Specifications:

• Continuous Drain Current Id: 2.5 A
• Current Id Max: 5.5 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 55 V
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On State Resistance: 150 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-223
• Power Dissipation Pd: 8.3 W
• Power Dissipation Ptot Max: 8.3 W
• Pulse Current Idm: 10 A
• Rds(on) Test Voltage Vgs: 5 V
• Reel Quantity: 4000
• SVHC: No SVHC (18-Jun-2010)
• Tape Width: 12 mm
• Threshold Voltage Vgs Typ: 1.5 V
• Transistor Case Style: SOT-223
• Transistor Polarity: N Channel
• Voltage Vds Typ: 55 V
• Voltage Vgs Max: 13 V
• Voltage Vgs Rds on Measurement: 5 V

RoHS: Yes

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