Datasheet BSH105,215 - NXP MOSFET, N CH, 20 V, 1.05 A, SOT23 — Ficha de datos

Descripción detallada

Manufacturer: NXP

Description: MOSFET, N CH, 20 V, 1.05 A, SOT23

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Docket:
Philips Semiconductors
Product specification
N-channel enhancement mode MOS transistor
FEATURES
· Very low threshold voltage · Fast switching · Logic level compatible · Subminiature surface mount package

Specifications:

• Continuous Drain Current Id: 600 mA
• Current Id Max: 1.05 A
• Drain Source Voltage Vds: 20 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 200 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23
• Power Dissipation: 417 mW
• Rds(on) Test Voltage Vgs: 4.5 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 570 mV
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: 20 V
• Voltage Vgs Max: 570 mV
• Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes

Otros nombres:

BSH105215, BSH105 215