Datasheet IXUC200N055 - IXYS MOSFET, N, ISOPLUS220 — Ficha de datos

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Manufacturer: IXYS

Description: MOSFET, N, ISOPLUS220

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Docket:
ADVANCED TECHNICAL INFORMATION
Trench Power MOSFET
ISOPLUS220TM
Electrically Isolated Back Surface
IXUC200N055

Specifications:

• Continuous Drain Current Id: 200 A
• Drain Source Voltage Vds: 55 V
• Isolation Voltage: 2.5 kV
• Mounting Type: Through Hole
• N-channel Gate Charge: 44nC
• On State Resistance: 5.1 MOhm
• Package / Case: ISOPLUS-220
• Power Dissipation Pd: 300 W
• Reverse Recovery Time trr Max: 80 ns
• Rth: 0.5
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: ISOPLUS-220
• Transistor Polarity: N Channel
• Voltage Vds Typ: 55 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes