Datasheet NTE2399 - NTE Electronics N CHANNEL MOSFET, 1 kV, 3.1 A, TO-220 — Ficha de datos

NTE Electronics NTE2399

Part Number: NTE2399

Descripción detallada

Manufacturer: NTE Electronics

Description: N CHANNEL MOSFET, 1 kV, 3.1 A, TO-220

Docket:
NTE2399 MOSFET NCh, Enhancement Mode High Speed Switch
Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25°C .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Derate Linearly Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C GatetoSource Voltage, VGS . . . . . . . . . . . . .

Specifications:

Continuous Drain Current Id: 3.1 A
Drain Source Voltage Vds: 1 kV
On Resistance Rds(on): 0.5 Ohm
Rds(on) Test Voltage, Vgs: 10 V
Threshold Voltage, Vgs Typ: 4 V
Transistor Polarity: N Channel

RoHS: Yes

Accessories:

WAKEFIELD SOLUTIONS - 273-AB