Datasheet NTE2377 - NTE Electronics N CHANNEL MOSFET, 900 V, 8 A, TO-3P — Ficha de datos

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Manufacturer: NTE Electronics

Description: N CHANNEL MOSFET, 900 V, 8 A, TO-3P

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Docket:
NTE2377 MOSFET N­Channel, Enhancement Mode, High Speed
Description: The NTE2377 is an N­Channel Enhancement Mode Power MOS Field Effect Transistor.

Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical applications include switching mode power supplies, uninterruptible power supplies, and motor speed control. Features: D Low ON­State Resistance D Very High­Speed Switching D Converters Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain­Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Gate­Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V DC Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Pulsed Drain Current (Note 1), IDP . . . . . . .

Specifications:

• Continuous Drain Current Id: 8 A
• Drain Source Voltage Vds: 900 V
• On Resistance Rds(on): 1.6 Ohm
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Polarity: N Channel

RoHS: Yes