Datasheet NTE2376 - NTE Electronics N CHANNEL MOSFET, 200 V, 30 A, TO-247 — Ficha de datos
Part Number: NTE2376
Descripción detallada
Manufacturer: NTE Electronics
Description: N CHANNEL MOSFET, 200 V, 30 A, TO-247
Docket:
NTE2376 MOSFET NCh, Enhancement Mode High Speed Switch
Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Isolated Central Mounting Hole D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25°C .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120A Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190W Derate Linearly Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W/°C GatetoSource Vo
Specifications:
- Continuous Drain Current Id: 30 A
- Drain Source Voltage Vds: 200 V
- On Resistance Rds(on): 85 MOhm
- Rds(on) Test Voltage Vgs: 10 V
- Threshold Voltage Vgs Typ: 4 V
- Transistor Polarity: N Channel
RoHS: Yes
Accessories:
- WAKEFIELD SOLUTIONS - 657-25ABPE