Datasheet IXTP3N120 - IXYS MOSFET, N, TO-220 — Ficha de datos

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Manufacturer: IXYS

Description: MOSFET, N, TO-220

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Docket:
High Voltage Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt
IXTA 3N120 IXTP 3N120
VDSS 1200 V
ID25 3A

Specifications:

• Capacitance Ciss Typ: 1050 pF
• Continuous Drain Current Id: 3 A
• Current Id Max: 3 A
• Drain Source Voltage Vds: 1.2 kV
• Junction to Case Thermal Resistance A: 0.8°C/W
• Mounting Type: Through Hole
• N-channel Gate Charge: 39nC
• Number of Pins: 3
• On State Resistance: 4.5 Ohm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: TO-220
• Power Dissipation Pd: 150 W
• Rds(on) Test Voltage Vgs: 10 V
• Reverse Recovery Time trr Max: 700 ns
• Threshold Voltage Vgs Typ: 5 V
• Transistor Case Style: TO-220
• Transistor Polarity: N Channel
• Voltage Vds Typ: 1.2 kV
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Fischer Elektronik - SK 145/37,5 STS-220
• Fischer Elektronik - SK 409/25,4 STS
• Fischer Elektronik - SK 409/50,8 STS
• Fischer Elektronik - WLK 5