Datasheet IXTK200N10P - IXYS MOSFET, N, TO-264 — Ficha de datos

IXYS IXTK200N10P

Part Number: IXTK200N10P

Descripción detallada

Manufacturer: IXYS

Description: MOSFET, N, TO-264

Docket:
PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTK 200N10P
VDSS = 100 V ID25 = 200 A RDS(on) 7.5 m
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight

Specifications:

Capacitance Ciss Typ: 7600 pF
Continuous Drain Current Id: 200 A
Current Id Max: 200 A
Drain Source Voltage Vds: 100 V
Junction to Case Thermal Resistance A: 0.18°C/W
Mounting Type: Through Hole
N-channel Gate Charge: 240nC
Number of Pins: 3
On State Resistance: 7.5 MOhm
Operating Temperature Range: -55°C to +175°C
Package / Case: TO-264
Power Dissipation Pd: 800 W
Rds(on) Test Voltage Vgs: 15 V
Reverse Recovery Time trr Max: 100 ns
Threshold Voltage Vgs Typ: 5 V
Transistor Case Style: TO-264
Transistor Polarity: N Channel
Voltage Vds Typ: 100 V
Voltage Vgs Max: 20 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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