Datasheet IXFR180N15P - IXYS MOSFET, N, ISOPLUS247 — Ficha de datos

IXYS IXFR180N15P

Part Number: IXFR180N15P

Descripción detallada

Manufacturer: IXYS

Description: MOSFET, N, ISOPLUS247

Docket:
PolarHVTM HiPerFET Power MOSFET
ISOPLUS247TM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Fd Weight 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, 1 minute Mounting force Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 M Continuous Transient TC = 25° C External Lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150° C, RG = 4 TC = 25° C
IXFR 180N15P

Specifications:

Capacitance Ciss Typ: 7000 pF
Continuous Drain Current Id: 100 A
Current Id Max: 100 A
Drain Source Voltage Vds: 150 V
Isolation Voltage: 2.5 kV
Mounting Type: Through Hole
N-channel Gate Charge: 240nC
Number of Pins: 3
On State Resistance: 13 MOhm
Operating Temperature Range: -55°C to +175°C
Package / Case: ISOPLUS-247
Power Dissipation Pd: 300 W
Rds(on) Test Voltage Vgs: 10 V
Reverse Recovery Time trr Max: 200 ns
Rth: 0.5
Threshold Voltage Vgs Typ: 5 V
Transistor Case Style: ISOPLUS-247
Transistor Polarity: N Channel
Voltage Vds Typ: 150 V
Voltage Vgs Max: 20 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

Panasonic - EYGA091203SM
Panasonic - EYGA121807A