Datasheet IXFP3N120 - IXYS MOSFET, N, TO-220 — Ficha de datos

IXYS IXFP3N120

Part Number: IXFP3N120

Descripción detallada

Manufacturer: IXYS

Description: MOSFET, N, TO-220

Docket:
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
Preliminary Data Sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque (TO-220) TO-220 TO-263 IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C, RG = 4.7 TC = 25°C Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient TC = 25°C
IXFA 3N120 IXFP 3N120

Specifications:

Capacitance Ciss Typ: 1050 pF
Continuous Drain Current Id: 3 A
Current Id Max: 3 A
Drain Source Voltage Vds: 120 V
Junction to Case Thermal Resistance A: 0.62°C/W
Mounting Type: Through Hole
N-channel Gate Charge: 39nC
Number of Pins: 3
On State Resistance: 4.5 Ohm
Operating Temperature Range: -55°C to +150°C
Package / Case: TO-220
Power Dissipation Pd: 200 W
Rds(on) Test Voltage Vgs: 10 V
Reverse Recovery Time trr Max: 250 ns
Threshold Voltage Vgs Typ: 5 V
Transistor Case Style: TO-220
Transistor Polarity: N Channel
Voltage Vds Typ: 1.2 kV
Voltage Vgs Max: 20 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

Fischer Elektronik - SK 145/37,5 STS-220
Fischer Elektronik - SK 409/25,4 STS
Fischer Elektronik - SK 409/50,8 STS
Fischer Elektronik - WLK 5