Datasheet IXFN230N10 - IXYS MOSFET, N, SOT-227B — Ficha de datos

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Manufacturer: IXYS

Description: MOSFET, N, SOT-227B

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Docket:
Advanced Technical Information
HiPerFETTM Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
IXFN 230N10
VDSS ID25

Specifications:

• Continuous Drain Current Id: 230 A
• Current Id Max: 230 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 100 V
• Full Power Rating Temperature: 25°C
• Mounting Type: Screw
• Number of Pins: 4
• On State Resistance Max: 6 MOhm
• On State Resistance: 6 MOhm
• Package / Case: ISOTOP
• Power Dissipation Pd: 700 W
• Pulse Current Idm: 920 A
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: ISOTOP
• Transistor Polarity: N Channel
• Voltage Vds Typ: 100 V
• Voltage Vds: 100 V
• Voltage Vgs Max: 4 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 4 V

RoHS: Yes

Accessories:

• Panasonic - EYGA121807A
• SCHRODER - 20900