Datasheet IXFN200N07 - IXYS MOSFET, N, SOT-227B — Ficha de datos

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Manufacturer: IXYS

Description: MOSFET, N, SOT-227B

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Docket:
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
VDSS IXFN 200 N06 IXFN 200 N07 60 V 70 V
ID25 200 A 200 A
RDS(on) 6 6 m m

Specifications:

• Avalanche Single Pulse Energy Eas: 2J
• Continuous Drain Current Id: 200 A
• Current Id Max: 200 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 70 V
• Full Power Rating Temperature: 25°C
• Isolation Voltage: 2.5 kV
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: Screw
• Number of Pins: 3
• Number of Transistors: 1
• On State Resistance Max: 6 MOhm
• On State Resistance: 6 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: ISOTOP
• Power Dissipation Pd: 520 W
• Pulse Current Idm: 600 A
• Rds(on) Test Voltage Vgs: 10 V
• Repetitive Avalanche Energy Max: 30mJ
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: ISOTOP
• Transistor Polarity: N Channel
• Voltage Vds Typ: 70 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 4 V
• Weight: 0.044kg

RoHS: Yes

Accessories:

• Panasonic - EYGA121807A
• SCHRODER - 20900