Datasheet IXFK30N100Q2 - IXYS MOSFET, N, TO-264 — Ficha de datos
Part Number: IXFK30N100Q2
Descripción detallada
Manufacturer: IXYS
Description: MOSFET, N, TO-264
Docket:
HiPerFETTM Power MOSFETs
Q-Class
IXFK 30N100Q2 IXFX 30N100Q2
VDSS = 1000 V = 30 A ID25 RDS(on) = 0.40 trr 300 ns
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr
Specifications:
- Avalanche Single Pulse Energy Eas: 4J
- Continuous Drain Current Id: 30 A
- Current Id Max: 30 A
- Current Temperature: 25°C
- Drain Source Voltage Vds: 1 kV
- Full Power Rating Temperature: 25°C
- Junction Temperature Tj Max: 150°C
- Junction Temperature Tj Min: -55°C
- Mounting Type: Through Hole
- N-channel Gate Charge: 186nC
- Number of Pins: 3
- Number of Transistors: 1
- On State Resistance Max: 400 MOhm
- On State Resistance: 400 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: TO-264
- Power Dissipation Pd: 735 W
- Pulse Current Idm: 120 A
- Rate of Voltage Change dv / dt: 20V/ns
- Rds(on) Test Voltage Vgs: 10 V
- Repetitive Avalanche Energy Max: 60mJ
- Reverse Recovery Time trr Typ: 250 ns
- Threshold Voltage Vgs Typ: 5 V
- Transistor Case Style: TO-264
- Transistor Polarity: N Channel
- Transistor Type: MOSFET
- Voltage Vds Typ: 1 kV
- Voltage Vgs Max: 30 V
- Voltage Vgs Rds on Measurement: 10 V
- Voltage Vgs th Max: 5 V
- Weight: 0.00001kg
RoHS: Yes
Accessories:
- Panasonic - EYGA091203SM
- Panasonic - EYGA121807A