Datasheet IXFH30N50P - IXYS MOSFET, N, TO-247 — Ficha de datos
Part Number: IXFH30N50P
Descripción detallada
Manufacturer: IXYS
Description: MOSFET, N, TO-247
Docket:
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS
VDSS ID25
RDS(on) trr
Specifications:
- Capacitance Ciss Typ: 4150 pF
- Continuous Drain Current Id: 30 A
- Current Id Max: 30 A
- Drain Source Voltage Vds: 500 V
- Junction to Case Thermal Resistance A: 0.27°C/W
- Mounting Type: Through Hole
- N-channel Gate Charge: 70nC
- Number of Pins: 3
- On State Resistance: 200 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: TO-247
- Power Dissipation Pd: 460 W
- Rds(on) Test Voltage Vgs: 10 V
- Reverse Recovery Time trr Max: 200 ns
- Threshold Voltage Vgs Typ: 5 V
- Transistor Case Style: TO-247
- Transistor Polarity: N Channel
- Voltage Vds Typ: 500 V
- Voltage Vgs Max: 30 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes
Accessories:
- Dow Corning - 2265931
- Fischer Elektronik - FK 243 MI 247 O
- Fischer Elektronik - WLK 5