Datasheet IXFH110N10P - IXYS MOSFET, N, TO-247 — Ficha de datos

IXYS IXFH110N10P

Part Number: IXFH110N10P

Descripción detallada

Manufacturer: IXYS

Description: MOSFET, N, TO-247

Docket:
PolarHTTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated
IXFH 110N10P IXFV 110N10P IXFV 110N10PS
VDSS = 100 V ID25 = 110 A RDS(on) 15 m trr 150 ns
Symbol VDSS VDGR VGSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight

Specifications:

Capacitance Ciss Typ: 3550 pF
Continuous Drain Current Id: 110 A
Current Id Max: 110 A
Drain Source Voltage Vds: 100 V
Junction to Case Thermal Resistance A: 0.31°C/W
Mounting Type: Through Hole
N-channel Gate Charge: 110nC
Number of Pins: 3
On State Resistance: 15 MOhm
Operating Temperature Range: -55°C to +175°C
Package / Case: TO-247
Power Dissipation Pd: 480 W
Rds(on) Test Voltage Vgs: 10 V
Reverse Recovery Time trr Max: 150 ns
Threshold Voltage Vgs Typ: 5 V
Transistor Case Style: TO-247
Transistor Polarity: N Channel
Voltage Vds Typ: 100 V
Voltage Vgs Max: 20 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

Dow Corning - 2265931
Fischer Elektronik - FK 243 MI 247 O
Fischer Elektronik - WLK 5