Datasheet IXFA10N80P - IXYS MOSFET, N, TO-263 — Ficha de datos

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Manufacturer: IXYS

Description: MOSFET, N, TO-263

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Docket:
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFA10N80P IXFH10N80P IXFP10N80P IXFQ10N80P
VDSS
ID25

Specifications:

• Capacitance Ciss Typ: 2300 pF
• Continuous Drain Current Id: 10 A
• Current Id Max: 10 A
• Drain Source Voltage Vds: 800 V
• Junction to Case Thermal Resistance A: 0.42°C/W
• Mounting Type: SMD
• N-channel Gate Charge: 40nC
• Number of Pins: 3
• On State Resistance: 1.1 Ohm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: D2-PAK
• Power Dissipation Pd: 300 W
• Rds(on) Test Voltage Vgs: 10 V
• Reverse Recovery Time trr Max: 250 ns
• Threshold Voltage Vgs Typ: 5.5 V
• Transistor Case Style: D2-PAK
• Transistor Polarity: N Channel
• Voltage Vds Typ: 800 V
• Voltage Vgs Max: 30 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Fischer Elektronik - FK 244 08 D2 PAK
• Fischer Elektronik - FK 244 13 D2 PAK
• Fischer Elektronik - WLK 5