Datasheet IRFSL33N15DPBF - International Rectifier MOSFET, N, D2-PAK — Ficha de datos

International Rectifier IRFSL33N15DPBF

Part Number: IRFSL33N15DPBF

Descripción detallada

Manufacturer: International Rectifier

Description: MOSFET, N, D2-PAK

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Docket:
PD- 95537
SMPS MOSFET
IRFB33N15DPbF IRFS33N15DPbF IRFSL33N15DPbF
HEXFET® Power MOSFET
Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.

Note AN1001) l Fully Characterized Avalanche Voltage and Current

Specifications:

  • Avalanche Single Pulse Energy Eas: 330mJ
  • Base Number: 15
  • Continuous Drain Current Id: 33 A
  • Drain Source Voltage Vds: 150 V
  • Fall Time tf: 21 ns
  • Junction Temperature Tj Max: 175°C
  • Junction Temperature Tj Min: -55°C
  • Mounting Type: SMD
  • On State Resistance: 56 MOhm
  • Package / Case: D2-PAK
  • Power Dissipation Pd: 3.8 W
  • Pulse Current Idm: 130 A
  • Rate of Voltage Change dv / dt: 4.4V/ns
  • Repetitive Avalanche Energy Max: 17mJ
  • Rise Time: 38 ns
  • SVHC: No SVHC (15-Dec-2010)
  • Storage Temperature Max: 175°C
  • Storage Temperature Min: -55°C
  • Threshold Voltage Vgs Typ: 5.5 V
  • Transistor Case Style: D2-PAK
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 150 V
  • Voltage Vds: 150 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Max: 5.5 V
  • Voltage Vgs th Min: 3 V

RoHS: Y-Ex

Accessories:

  • Fischer Elektronik - FK 244 08 D2 PAK
  • Fischer Elektronik - FK 244 13 D2 PAK
  • Fischer Elektronik - WLK 5