Datasheet IRLR8103VPBF - International Rectifier MOSFET, N, 30 V, 89 A, D-PAK — Ficha de datos
Part Number: IRLR8103VPBF
Descripción detallada
Manufacturer: International Rectifier
Description: MOSFET, N, 30 V, 89 A, D-PAK
Docket:
PD - 95093A
IRLR8103VPbF
· · · · · N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications
D
· 100% RG Tested · Lead-Free Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge.
The reduced conduction and switching losses make it ideal for high efficiency DCDC converters that power the latest generation of microprocessors. The IRLR8103V has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRLR8103V offers an extremely low combination of Qsw & RDS(on) for reduced losses in both control and synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB
Specifications:
- Alternate Case Style: D-PAK
- Continuous Drain Current Id: 91 A
- Current Id Max: 89 A
- Drain Source Voltage Vds: 30 V
- Junction to Case Thermal Resistance A: 1.4°C/W
- Mounting Type: SMD
- Number of Pins: 3
- On Resistance Rds(on): 7.9 MOhm
- On State resistance @ Vgs = 10V: 9 MOhm
- Package / Case: DPAK
- Power Dissipation Pd: 115 W
- Pulse Current Idm: 363 A
- Rds(on) Test Voltage Vgs: 10 V
- SVHC: No SVHC (15-Dec-2010)
- Threshold Voltage Vgs Typ: 3 V
- Transistor Case Style: D-PAK
- Transistor Polarity: N Channel
- Voltage Vds Typ: 30 V
- Voltage Vgs Max: 3 V
- Voltage Vgs Rds on Measurement: 10 V
- Voltage Vgs th Max: 3 V
- Voltage Vgs th Min: 1 V
RoHS: Y-Ex
Accessories:
- Fischer Elektronik - FK 244 08 D PAK
- Fischer Elektronik - FK 244 13 D PAK
- Fischer Elektronik - WLK 5