Datasheet SI4435DYPBF - International Rectifier MOSFET, P, LOGIC, SO-8 — Ficha de datos

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Manufacturer: International Rectifier

Description: MOSFET, P, LOGIC, SO-8

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Docket:
PD- 95133
Si4435DYPbF
HEXFET® Power MOSFET
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Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free

Specifications:

• Continuous Drain Current Id: 8 A
• Current Id Max: -8 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 30 V
• External Depth: 5.2 mm
• External Length / Height: 1.75 mm
• External Width: 4.05 mm
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 15 MOhm
• Package / Case: SOIC
• Power Dissipation Pd: 2.5 W
• Pulse Current Idm: 50 A
• Rds(on) Test Voltage Vgs: -10 V
• Row Pitch: 6.3 mm
• SMD Marking: SI4435DYPBF
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: -1 V
• Transistor Case Style: SOIC
• Transistor Polarity: P Channel
• Voltage Vds Typ: -30 V
• Voltage Vgs Max: -1 V
• Voltage Vgs Rds on Measurement: -10 V

RoHS: Yes

Accessories:

• Dow Corning - 2265931
• Fischer Elektronik - ICK SMD A 5 SA
• Fischer Elektronik - WLK 5
• Roth Elektronik - RE932-01