Datasheet IRFB4127PBF - International Rectifier MOSFET, N-CH, 200 V, TO-220AB — Ficha de datos

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Manufacturer: International Rectifier

Description: MOSFET, N-CH, 200 V, TO-220AB

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Docket:
PD -97136A
IRFB4127PbF
HEXFET® Power MOSFET
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free
D

Specifications:

• Continuous Drain Current Id: 76 A
• Current Id Max: 76 A
• Drain Source Voltage Vds: 200 V
• Mounting Type: Through Hole
• Number of Pins: 3
• On Resistance Rds(on): 17 MOhm
• Operating Temperature Range: -55°C to +175°C
• Package / Case: TO-220AB
• Power Dissipation Pd: 375 W
• Pulse Current Idm: 300 A
• Rds(on) Test Voltage Vgs: 20 V
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: TO-220AB
• Transistor Polarity: N Channel
• Voltage Vds Typ: 200 V
• Voltage Vgs Max: 5 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 5 V
• Voltage Vgs th Min: 3 V

RoHS: Yes