Datasheet IRF7854PBF - International Rectifier MOSFET, N, 80 V, SO-8 — Ficha de datos

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Manufacturer: International Rectifier

Description: MOSFET, N, 80 V, SO-8

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Docket:
PD - 97172
IRF7854PbF
Applications l Primary Side Switch in Bridge or twoswitch forward topologies using 48V (±10%) or 36V to 60V ETSI range inputs.

l Secondary Side Synchronous Rectification Switch for 12Vout l Suitable for 48V Non-Isolated Synchronous Buck DC-DC Applications Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
HEXFET® Power MOSFET
VDSS

Specifications:

• Base Number: 7854
• Continuous Drain Current Id: 10 A
• Current Id Max: 10 A
• Drain Source Voltage Vds: 80 V
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 13.4 MOhm
• Operating Temperature Range: -55°C to +150°C
• Output Current Max: 2.5 A
• Package / Case: SOIC
• Power Dissipation Pd: 2.5 W
• Pulse Current Idm: 79 A
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 4.9 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 80 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes