Datasheet IRF7853PBF - International Rectifier MOSFET, N, 100 V, SO-8 — Ficha de datos

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Manufacturer: International Rectifier

Description: MOSFET, N, 100 V, SO-8

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Docket:
PD - 97069
IRF7853PbF
HEXFET® Power MOSFET
Applications Primary Side Switch in Bridge Topology VDSS RDS(on) max ID in Universal Input (36-75Vin) Isolated 100V 18m:@VGS = 10V 8.3A DC-DC Converters l Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DC A Converters A 1 8 D S l Secondary Side Synchronous 2 7 Rectification Switch for 15Vout S D l Suitable for 48V Non-Isolated 3 6 S D Synchronous Buck DC-DC Applications 4 5 G D Benefits l Low Gate to Drain Charge to Reduce SO-8 Top View Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.

Note AN1001) l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings
l

Specifications:

• Cont Current Id @ 25В°C: 8.3 A
• Cont Current Id @ 70В°C: 6.6
• Continuous Drain Current Id: 8.3 A
• Current Id Max: 8.3 A
• Drain Source Voltage Vds: 100 V
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 18 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC
• Power Dissipation Pd: 2.5 W
• Pulse Current Idm: 66 A
• Rds(on) Test Voltage Vgs: 10 V
• Rth: 50
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 4.9 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 100 V
• Voltage Vds: 100 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes