Datasheet IRF7815PBF - International Rectifier MOSFET, W DIODE, N CH, 150 V, 5.1 A, SO8 — Ficha de datos

Descripción detallada

Manufacturer: International Rectifier

Description: MOSFET, W DIODE, N CH, 150 V, 5.1 A, SO8

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Docket:
PD - 96284
IRF7815PbF
HEXFET® Power MOSFET
Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS(on) at 10V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max.

Gate Rating
RDS(on) max Qg (typ.) 150V 43m @VGS = 10V 25nC

Specifications:

• Continuous Drain Current Id: 5.1 A
• Drain Source Voltage Vds: 150 V
• Number of Pins: 8
• On Resistance Rds(on): 0.034 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 2.5 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vgs Max: 20 V

RoHS: Yes

Accessories:

• Fischer Elektronik - ICK SMD A 5 SA