Datasheet IRF7606PBF - International Rectifier MOSFET, P, MICRO-8 — Ficha de datos
Part Number: IRF7606PBF
Descripción detallada
Manufacturer: International Rectifier
Description: MOSFET, P, MICRO-8
Docket:
PD - 91264E
IRF7606
HEXFET® Power MOSFET
l l l l l l l
Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching
Specifications:
- Capacitance Ciss Typ: 520 pF
- Charge Qrr @ Tj = 25В°C Typ: 50nC
- Continuous Drain Current Id: 3.6 A
- Current Id Max: -3.6 A
- Current Temperature: 25°C
- Drain Source Voltage Vds: 20 V
- External Depth: 5.03 mm
- External Length / Height: 1.11 mm
- External Width: 3.05 mm
- Full Power Rating Temperature: 25°C
- Gfs Min: 2.3A/V
- Junction Temperature Tj Max: 150°C
- Junction Temperature Tj Min: -55°C
- Lead Spacing: 0.65 mm
- Mounting Type: SMD
- Number of Pins: 8
- Number of Transistors: 1
- On Resistance Rds(on): 90 MOhm
- On State Resistance Max: 90 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: Micro8
- Power Dissipation Pd: 1.8 W
- Pulse Current Idm: 19 A
- Rate of Voltage Change dv / dt: 5V/ns
- Rds(on) Test Voltage Vgs: -10 V
- Reverse Recovery Time trr Typ: 43 ns
- Row Pitch: 4.24 mm
- SMD Marking: 7606
- SVHC: No SVHC (15-Dec-2010)
- Threshold Voltage Vgs Typ: -1 V
- Transistor Case Style: MicroSOIC
- Transistor Polarity: P Channel
- Voltage Vds: 30 V
- Voltage Vgs Max: -20 V
RoHS: Yes
Accessories:
- LICEFA - V11-7-6-10
- LICEFA - V11-7
- Roth Elektronik - RE903