Datasheet IRF6643TR1PBF - International Rectifier MOSFET, N, DIRECTFET — Ficha de datos

International Rectifier IRF6643TR1PBF

Part Number: IRF6643TR1PBF

Descripción detallada

Manufacturer: International Rectifier

Description: MOSFET, N, DIRECTFET

Docket:
PD - 97112A
IRF6643TRPbF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
RoHS Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques

Simulation Model

Specifications:

Avalanche Single Pulse Energy Eas: 50mJ
Base Number: 6643
Cont Current Id @ 70В°C: 5 A
Continuous Drain Current Id: 6.2 A
Current Id Max: 6.2 A
Drain Source Voltage Vds: 150 V
Fall Time tf: 4.4 ns
Junction Temperature Tj Max: 150°C
Junction Temperature Tj Min: -40°C
Mounting Type: SMD
Number of Pins: 7
On Resistance Rds(on): 34.5 MOhm
Operating Temperature Range: -40°C to +150°C
Package / Case: MZ
Power Dissipation Pd: 2.8 mW
Pulse Current Idm: 76 A
Rds(on) Test Voltage Vgs: 10 V
Rise Time: 5 ns
SVHC: No SVHC (15-Dec-2010)
Storage Temperature Max: 150°C
Storage Temperature Min: -40°C
Threshold Voltage Vgs Typ: 4 V
Transistor Case Style: DirectFET MZ
Transistor Polarity: N Channel
Voltage Vds Typ: 150 V
Voltage Vds: 150 V
Voltage Vgs Max: 20 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

Panasonic - EYGA091203SM
Panasonic - EYGA121807A