Datasheet IRF230 - International Rectifier MOSFET, N, TO-3 — Ficha de datos

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Manufacturer: International Rectifier

Description: MOSFET, N, TO-3

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Docket:
PD - 90334F
IRF230 REPETITIVE A ALANCHE AND dv/dt RATED V JANTX2N6758 HEXFET TRANSISTORS JANTXV2N6758 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 200V, N-CHANNEL
Product Summary
Part Number IRF230 BVDSS 200V RDS(on) 0.40 ID 9.0A
The HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest "State of the Art" design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

Specifications:

• Avalanche Single Pulse Energy Eas: 54mJ
• Continuous Drain Current Id: 9 A
• Current Iar: 9 A
• Current Id Max: 9 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 200 V
• Fixing Centres: 30 mm
• Full Power Rating Temperature: 25°C
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Lead Spacing: 11 mm
• Mounting Type: Through Hole
• Number of Pins: 2
• Number of Transistors: 1
• On Resistance Rds(on): 400 MOhm
• Package / Case: TO-3
• Power Dissipation Pd: 75 W
• Pulse Current Idm: 36 A
• Rds(on) Test Voltage Vgs: 10 V
• Repetitive Avalanche Energy Max: 7.5mJ
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: TO-3
• Transistor Polarity: N Channel
• Voltage Vds Typ: 200 V
• Voltage Vgs Max: 4 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 4 V
• Weight: 0.01kg

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