Datasheet IPB50R250CP - Infineon MOSFET, N, TO-263 — Ficha de datos

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Manufacturer: Infineon

Description: MOSFET, N, TO-263

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Docket:
IPB50R250CP
CoolMOSTM Power Transistor
Features · Lowest figure of merit RON x Qg · Ultra low gate charge · Extreme dv/dt rated · High peak current capability · Pb-free lead plating; RoHS compliant · Quailfied according to JEDEC1) for target applications
Product Summary V DS @Tjmax R DS(on),max Q g,typ 550 0.250 27 V nC
PG-TO263

Specifications:

• Continuous Drain Current Id: 13 A
• Current Id Max: 13 A
• Drain Source Voltage Vds: 550 V
• Mounting Type: SMD
• On Resistance Rds(on): 250 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: TO-263
• Power Dissipation Pd: 114 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: TO-263
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vds Typ: 550 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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