Datasheet SPD02N60C3 - Infineon MOSFET, N, COOLMOS, D-PAK — Ficha de datos

Descripción detallada

Manufacturer: Infineon

Description: MOSFET, N, COOLMOS, D-PAK

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Docket:
VDS
· · · · ·
G
Tjmax
G

Specifications:

• Alternate Case Style: D-PAK
• Avalanche Single Pulse Energy Eas: 50mJ
• Continuous Drain Current Id: 1.8 A
• Current Iar: 1.8 A
• Current Id Max: 1.8 A
• Current Idss Max: 1 µA
• Current Temperature: 25°C
• Drain Source Voltage Vds: 650 V
• Full Power Rating Temperature: 25°C
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 3 Ohm
• On State Resistance Max: 3 Ohm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: DPAK
• Power Dissipation Pd: 25 W
• Power Dissipation Ptot Max: 25 W
• Pulse Current Idm: 5.4 A
• Rate of Voltage Change dv / dt: 50V/ns
• Rds(on) Test Voltage Vgs: 10 V
• Repetitive Avalanche Energy Max: 0.07mJ
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: D-PAK
• Transistor Polarity: N Channel
• Voltage Vds Typ: 650 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 3.9 V
• Voltage Vgs th Min: 2.1 V

RoHS: Yes

Accessories:

• Fischer Elektronik - FK 244 08 D PAK
• Fischer Elektronik - FK 244 13 D PAK
• Fischer Elektronik - WLK 5