Datasheet SPA11N65C3 - Infineon MOSFET, N, 650 V, TO-220F — Ficha de datos

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Manufacturer: Infineon

Description: MOSFET, N, 650 V, TO-220F

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Docket:
SPP11N65C3,SPA11N65C3 SPI11N65C3 Cool MOSTM Power Transistor
Feature · New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · High peak current capability · Improved transconductance
PG-TO262
V DS RDS(on) ID
PG-TO220FP

Specifications:

• Continuous Drain Current Id: 11 A
• Current Id Max: 11 A
• Drain Source Voltage Vds: 650 V
• Mounting Type: Through Hole
• Number of Pins: 3
• On Resistance Rds(on): 380 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: TO-220F
• Power Dissipation Pd: 33 W
• Pulse Current Idm: 33 A
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: TO-220F
• Transistor Polarity: N Channel
• Voltage Vds Typ: 650 V
• Voltage Vds: 650 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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