Datasheet IPI90R1K0C3 - Infineon MOSFET, N, TO-262 — Ficha de datos
Part Number: IPI90R1K0C3
Descripción detallada
Manufacturer: Infineon
Description: MOSFET, N, TO-262
Docket:
IPI90R1K0C3
CoolMOSTM Power Transistor
Features · Lowest figure-of-merit R ON x Qg · Extreme dv/dt rated · High peak current capability · Qualified according to JEDEC1) for target applications · Pb-free lead plating; RoHS compliant · Ultra low gate charge
Product Summary V DS @ T J=25°C R DS(on),max @ T J= 25°C Q g,typ 900 1.0 34 V nC
PG-TO262
Specifications:
- Continuous Drain Current Id: 5.7 A
- Current Id Max: 5.7 A
- Drain Source Voltage Vds: 900 V
- Mounting Type: Through Hole
- Number of Pins: 3
- On Resistance Rds(on): 1 Ohm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: TO-262
- Power Dissipation Pd: 89 W
- Rds(on) Test Voltage Vgs: 10 V
- Threshold Voltage Vgs Typ: 3 V
- Transistor Case Style: TO-262
- Transistor Polarity: N Channel
- Transistor Type: Power MOSFET
- Voltage Vds Typ: 900 V
- Voltage Vgs Max: 20 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes
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