Datasheet IPI60R099CP - Infineon MOSFET, N, TO-262 — Ficha de datos

Infineon IPI60R099CP

Part Number: IPI60R099CP

Descripción detallada

Manufacturer: Infineon

Description: MOSFET, N, TO-262

Docket:
IPI60R099CP
CoolMOSTM Power Transistor
Features · Worldwide best R ds,on in TO220 · Ultra low gate charge · Extreme dv/dt rated · High peak current capability · Qualified according to JEDEC1) for target applications · Pb-free lead plating; RoHS compliant
Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 0.099 60 V nC
PG-TO262

Specifications:

Continuous Drain Current Id: 31 A
Current Id Max: 31 A
Drain Source Voltage Vds: 650 V
Mounting Type: Through Hole
Number of Pins: 3
On Resistance Rds(on): 99 MOhm
Operating Temperature Range: -55°C to +150°C
Package / Case: TO-262
Power Dissipation Pd: 255 W
Rds(on) Test Voltage Vgs: 10 V
Threshold Voltage Vgs Typ: 3 V
Transistor Case Style: TO-262
Transistor Polarity: N Channel
Transistor Type: Power MOSFET
Voltage Vds Typ: 650 V
Voltage Vgs Max: 20 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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