Datasheet BSP129 - Infineon MOSFET, N, SOT-223 — Ficha de datos

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Manufacturer: Infineon

Description: MOSFET, N, SOT-223

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Docket:
BSP129
SIPMOS® Small-Signal-Transistor
Features · N-channel · Depletion mode · dv /dt rated · Available with V GS(th) indicator on reel · Pb-free lead plating; RoHS compliant
Product Summary V DS R DS(on),max I DSS,min 240 6 0.05 V A
PG-SOT-223

Specifications:

• Continuous Drain Current Id: 120 mA
• Current Id Max: 120 mA
• Current Temperature: 25°C
• Drain Source Voltage Vds: 240 V
• External Depth: 7.3 mm
• External Length / Height: 1.7 mm
• External Width: 6.7 mm
• Full Power Rating Temperature: 25°C
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: SMD
• Number of Pins: 4
• Number of Transistors: 1
• On Resistance Rds(on): 20 Ohm
• Package / Case: SOT-223
• Power Dissipation Pd: 1.7 W
• Power Dissipation Ptot Max: 1.7 W
• Pulse Current Idm: 480 mA
• Rds(on) Test Voltage Vgs: 10 V
• SMD Marking: BSP129
• Tape Width: 12 mm
• Threshold Voltage Vgs Typ: -1.4 V
• Transistor Case Style: SOT-223
• Transistor Polarity: N Channel
• Voltage Vds Typ: 240 V
• Voltage Vgs Max: -1.4 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 700 mV

RoHS: Yes