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P-Channel PowerTrench MOSFET, -40V, -50A, 12.3mΩ
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FDD4141
P-Channel PowerTrench® MOSFET
-40V, -50A, 12.3mΩ
Features General Description Max rDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and optimized Bvdss capability to offer
superior performance benefit in the applications. and optimized
switching performance capability reducing power dissipation
losses in converter/inverter applications. Max rDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A
High performance trench technology for extremely low rDS(on)
RoHS Compliant Applications
Inverter
Power Supplies S D G G
S D
-PA
K
TO
-2 52
(TO -252) D MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage
Drain Current -Continuous (Package limited) ID TC = 25°C -Continuous (Silicon limited) TC = 25°C -Continuous TA = 25°C PD
TJ, TSTG Units …