Datasheet NDT3055L - Fairchild MOSFET, N, SOT-223 — Ficha de datos

Fairchild NDT3055L

Part Number: NDT3055L

Descripción detallada

Manufacturer: Fairchild

Description: MOSFET, N, SOT-223

Docket:
August 1998
NDT3055L N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
Features

Specifications:

Continuous Drain Current Id: 3.5 A
Current Id Max: 4 A
Current Temperature: 25°C
Drain Source Voltage Vds: 60 V
External Depth: 7.3 mm
External Length / Height: 1.7 mm
External Width: 6.7 mm
Full Power Rating Temperature: 25°C
Mounting Type: SMD
Number of Pins: 4
Number of Transistors: 1
On Resistance Rds(on): 100 MOhm
Package / Case: SOT-223
Power Dissipation Pd: 3 W
Pulse Current Idm: 25 A
Rds(on) Test Voltage Vgs: 10 V
SMD Marking: 3055L
SVHC: No SVHC (15-Dec-2010)
Tape Width: 12 mm
Threshold Voltage Vgs Typ: 1.6 V
Transistor Case Style: SOT-223
Transistor Polarity: N Channel
Voltage Vds Typ: 60 V
Voltage Vgs Max: 1.6 V
Voltage Vgs Rds on Measurement: 10 V
Voltage Vgs th Max: 2 V

RoHS: Y-Ex