Datasheet FDS6675BZ - Fairchild MOSFET, P, SMD, SO-8 — Ficha de datos

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Manufacturer: Fairchild

Description: MOSFET, P, SMD, SO-8

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FDS6675BZ P-Channel PowerTrench® MOSFET
FDS6675BZ P-Channel PowerTrench® MOSFET
-30V, -11A, 13m General Description
This P-Channel MOSFET is producted using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.

This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
March 2009

Specifications:

• Continuous Drain Current Id: 11 A
• Current Id Max: -11 A
• Drain Source Voltage Vds: 30 V
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 1
• On Resistance Rds(on): 13 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC
• Power Dissipation: 2.5 W
• Pulse Current Idm: 55 A
• Rds(on) Test Voltage Vgs: -10 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: -2 V
• Transistor Case Style: SOIC
• Transistor Polarity: P Channel
• Voltage Vds Typ: -30 V
• Voltage Vgs Max: -25 V
• Voltage Vgs Rds on Measurement: -10 V

RoHS: Yes