Datasheet FDMS5672 - Fairchild MOSFET, N, SMD, MLP — Ficha de datos

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Manufacturer: Fairchild

Description: MOSFET, N, SMD, MLP

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Docket:
FDMS5672 N-Channel UltraFET Trench® MOSFET
December 2007
FDMS5672 N-Channel UltraFET Trench® MOSFET
60V, 22A, 11.5m Features General Description
UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications.

Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Max rDS(on) = 11.5m at VGS = 10V, ID = 10.6A Max rDS(on) = 16.5m at VGS = 6V, ID = 8A Typ Qg = 32nC at VGS = 10V Low Miller Charge Optimized efficiency at high frequencies RoHS Compliant

Specifications:

• Continuous Drain Current Id: 10.6 A
• Current Id Max: 10.6 A
• Drain Source Voltage Vds: 60 V
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 11.5 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: Power 56
• Power Dissipation: 2.5 W
• Pulse Current Idm: 60 A
• Rds(on) Test Voltage Vgs: 20 V
• SMD Marking: FDMS5672
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 3.2 V
• Transistor Case Style: Power 56
• Transistor Polarity: N Channel
• Voltage Vds Typ: 60 V
• Voltage Vgs Max: 3.2 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 4 V

RoHS: Yes