Datasheet FDC653N - Fairchild MOSFET, N, SMD, SUPERSOT-6 — Ficha de datos

Fairchild FDC653N

Part Number: FDC653N

Descripción detallada

Manufacturer: Fairchild

Description: MOSFET, N, SMD, SUPERSOT-6

Docket:
November 1997
FDC653N N-Channel Enhancement Mode Field Effect Transistor
General Description
This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Features

Specifications:

Continuous Drain Current Id: 5 A
Current Id Max: 5 A
Drain Source Voltage Vds: 30 V
Mounting Type: SMD
Number of Pins: 6
On Resistance Rds(on): 35 MOhm
Package / Case: SuperSOT-6
Power Dissipation: 1.6 W
Rds(on) Test Voltage Vgs: 10 V
SVHC: No SVHC (19-Dec-2011)
Threshold Voltage Vgs Typ: 1.7 V
Transistor Case Style: SuperSOT
Transistor Polarity: N Channel
Voltage Vds Typ: 30 V
Voltage Vgs Max: 1.7 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes