Datasheet FDC6321C - Fairchild MOSFET, DUAL, NP, SUPERSOT-6 — Ficha de datos

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Manufacturer: Fairchild

Description: MOSFET, DUAL, NP, SUPERSOT-6

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Docket:
April 1999
FDC6321C Dual N & P Channel , Digital FET
General Description
These dual N & P Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this dual digital FET can replace several digital transistors with different bias resistors.
Features

Specifications:

• Cont Current Id N Channel 2: 2.7 A
• Cont Current Id P Channel: 1.6 A
• Continuous Drain Current Id: 460 mA
• Current Id Max: 680 mA
• Current Temperature: 25°C
• Drain Source Voltage Vds: 25 V
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 6
• Number of Transistors: 2
• On Resistance Rds(on): 1.1 Ohm
• On State Resistance N Channel Max: 680 MOhm
• On State Resistance P Channel Max: 450 MOhm
• Package / Case: SuperSOT-6
• Power Dissipation Pd: 900 mW
• Pulse Current Idm: 1.5 A
• Rds(on) Test Voltage Vgs: 4.5 V
• SMD Marking: FDC6321C
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 800 mV
• Transistor Case Style: SuperSOT
• Transistor Polarity: N and P Channel
• Uni / Bi Directional Polarity: NP
• Voltage Vds Typ: 25 V
• Voltage Vds: 25 V
• Voltage Vgs Max: 800 mV
• Voltage Vgs Rds on Measurement: 4.5 V
• Voltage Vgs th Max: 1.5 V

RoHS: Yes

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