Datasheet BS270 - Fairchild MOSFET, N, TO-92 — Ficha de datos

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Manufacturer: Fairchild

Description: MOSFET, N, TO-92

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Docket:
April 1995
BS270 N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features

Specifications:

• Continuous Drain Current Id: 400 mA
• Current Id Max: 400 mA
• Current Temperature: 25°C
• Device Marking: BS270
• Drain Source Voltage Vds: 60 V
• Full Power Rating Temperature: 25°C
• Lead Spacing: 2.54 mm
• Mounting Type: Through Hole
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 2 Ohm
• Package / Case: TO-92
• Power Dissipation Pd: 625 mW
• Pulse Current Idm: 2 A
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 2.1 V
• Transistor Case Style: TO-92
• Transistor Polarity: N Channel
• Voltage Vds Typ: 60 V
• Voltage Vgs Max: 2.1 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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