Datasheet 2N7000 - Fairchild N CHANNEL MOSFET, 200 mA, 60 V, TO-92 — Ficha de datos

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Manufacturer: Fairchild

Description: N CHANNEL MOSFET, 200 mA, 60 V, TO-92

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Docket:
November 1995
2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features

Specifications:

• Continuous Drain Current Id: 200 mA
• Current Id Max: 200 mA
• Current Temperature: 25°C
• Device Marking: 2N7000
• Drain Source Voltage Vds: 60 V
• Full Power Rating Temperature: 25°C
• Lead Spacing: 1.27 mm
• Mounting Type: Through Hole
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 5.3 Ohm
• Package / Case: TO-92
• Power Dissipation Pd: 400 mW
• Pulse Current Idm: 500 mA
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 2.1 V
• Transistor Case Style: TO-92
• Transistor Polarity: N Channel
• Voltage Vds Typ: 60 V
• Voltage Vgs Max: 2.1 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Fairchild - 2N7000_D26Z
• ON Semiconductor - 2N7000G