Datasheet ZXMN2B03E6 - Diodes MOSFET, N, SOT-23-6 — Ficha de datos

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Manufacturer: Diodes

Description: MOSFET, N, SOT-23-6

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Docket:
ZXMN2B03E6 20V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability
Summary
V(BR)DSS RDS(on) ( ) 0.040 @ VGS= 4.5V 20 0.055 @ VGS= 2.5V 0.075 @ VGS= 1.8V ID (A) 5.4 4.6 4.0
Description
This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive.

Simulation Model

Specifications:

• Capacitance Ciss Typ: 1160 pF
• Continuous Drain Current Id: 5.4 A
• Drain Source Voltage Vds: 20 V
• Junction Temperature Tj Max: 150°C
• Mounting Type: SMD
• N-channel Gate Charge: 14.5nC
• On Resistance Rds(on): 40 MOhm
• Package / Case: SOT-23
• Pin Configuration: G(3), D(1, 2, 5, 6), S(4)
• Power Dissipation Pd: 1.1 W
• Pulse Current Idm: 26 A
• Reverse Recovery Time trr Typ: 10.8 ns
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 1 V
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Turn Off Time: 33.9 ns
• Turn On Time: 4.2 ns
• Voltage Vds Typ: 20 V
• Voltage Vgs Max: 8 V
• Voltage Vgs Rds N Channel: 4.5 V
• Voltage Vgs Rds on Measurement: 4.5 V
• Voltage Vgs th Max: 1 V
• Voltage Vgs th Min: 0.4 V

RoHS: Yes