Datasheet ZXMN10A07F - Diodes MOSFET, N, SOT-23 — Ficha de datos

Descripción detallada

Manufacturer: Diodes

Description: MOSFET, N, SOT-23

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Docket:
ZXMN10A07F
100V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS= 100V : RDS(on)= 0.7 DESCRIPTION
ID= 0.8A
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed.

This makes them ideal for high efficiency, low voltage power management applications.

Simulation Model

Specifications:

• Continuous Drain Current Id: 640 mA
• Current Id Max: 640 mA
• Current Temperature: 25°C
• Drain Source Voltage Vds: 100 V
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 1 Ohm
• On State Resistance Max: 1 Ohm
• Package / Case: SOT-23
• Power Dissipation Pd: 625 mW
• Power Dissipation Ptot Max: 625 mW
• Pulse Current Idm: 2.5 A
• Rds(on) Test Voltage Vgs: 10 V
• SMD Marking: 7N1
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Voltage Vds Typ: 100 V
• Voltage Vgs Max: 4 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Min: 2 V

RoHS: Yes

Accessories:

• LICEFA - V11-7-6-10
• LICEFA - V11-7
• Roth Elektronik - RE901