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Silicon Planar Epitaxial NPN transistor
Extracto del documento
2N3019 ® SMALL SIGNAL NPN TRANSISTOR
DESCRIPTION
The 2N3019 is a silicon Planar Epitaxial NPN
transistor in Jedec TO-39 metal case, designed
for high-current, high frequency amplifier
application. It feature high gain and low saturation
voltage. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS
Symbol Parameter V CBO Collector-Base Voltage (I E = 0) V CEO Collector-Emitter Voltage (I B = 0) V EBO Emitter-Base Voltage (I C = 0) IC
P tot
T stg
Tj Collector Current
Total Dissipation at T amb ≤ 25 o C
at T C ≤ 25 o C
Storage Temperature
Max. Operating Junction Temperature September 2002 Value Unit 140 V 80 V 7 V 1 A 0.8
5 W
W -65 to 175 o C 175 o C 1/4 2N3019
THERMAL DATA
R thj-case
R thj-amb Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient Max
Max o 30
187.5 o C/W …
