Datasheet 2N5302G - ON Semiconductor TRANSISTOR, NPN, TO-3 — Ficha de datos

ON Semiconductor 2N5302G

Part Number: 2N5302G

Descripción detallada

Manufacturer: ON Semiconductor

Description: TRANSISTOR, NPN, TO-3

Docket:
2N5302 High-Power NPN Silicon Transistor
High-power NPN silicon transistors are for use in power amplifier and switching circuits applications.
Features http://onsemi.com
· Low Collector-Emitter Saturation Voltage - ·
VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc Pb-Free Package is Available*

Simulation Model

Specifications:

Collector Emitter Voltage V(br)ceo: 60 V
Collector Emitter Voltage Vces: 750 mV
Current Ic Continuous a Max: 30 A
DC Collector Current: 30 A
DC Current Gain Min: 5
DC Current Gain: 60 mA
Gain Bandwidth ft Typ: 2 MHz
Mounting Type: Through Hole
Number of Pins: 2
Package / Case: TO-204AA
Power Dissipation Pd: 200 W
SVHC: No SVHC (15-Dec-2010)
Transistor Case Style: TO-204AA
Transistor Polarity: NPN

RoHS: Yes