Datasheet BST62,115 - NXP TRANSISTOR DARL PNP SOT89 — Ficha de datos
Part Number: BST62,115
Descripción detallada
Manufacturer: NXP
Description: TRANSISTOR DARL PNP SOT89
Docket:
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
BST60; BST61; BST62 PNP Darlington transistors
Specifications:
- Collector Emitter Voltage V(br)ceo: -80 V
- Collector Emitter Voltage Vces: -1.3 V
- Current Ic Continuous a Max: -500 mA
- DC Collector Current: -1 A
- DC Current Gain Min: 2000
- DC Current Gain: 2000
- Gain Bandwidth ft Typ: 200 MHz
- Mounting Type: SMD
- Number of Pins: 3
- Operating Temperature Range: -65°C to +150°C
- Package / Case: SOT-89
- Power Dissipation Pd: 1.3 W
- SVHC: No SVHC (18-Jun-2010)
- Transistor Case Style: SOT-89
- Transistor Polarity: PNP
- Transistor Type: Darlington
RoHS: Yes
Otros nombres:
BST62115, BST62 115