Datasheet PBSS301ND - NXP TRANSISTOR, NPN, 20 V, 4 A, SSOT-6 — Ficha de datos

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Manufacturer: NXP

Description: TRANSISTOR, NPN, 20 V, 4 A, SSOT-6

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Docket:
PBSS301ND
20 V, 4 A NPN low VCEsat (BISS) transistor
Rev.

03 -- 7 September 2007 Product data sheet
1. Product profile
1.1 General description

Specifications:

• Collector Emitter Voltage V(br)ceo: 20 V
• Collector Emitter Voltage Vces: 420 mV
• Current Ic @ Vce Sat: 6 A
• Current Ic Continuous a Max: 4 A
• DC Current Gain Min: 300
• DC Current Gain: 500 mA
• Gain Bandwidth ft Typ: 100 MHz
• Mounting Type: SMD
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SSOT-6
• Power Dissipation Pd: 1.1 W
• Power Dissipation Ptot Max: 1.1 W
• SVHC: No SVHC (18-Jun-2010)
• Transistor Case Style: SSOT
• Transistor Polarity: NPN
• Transistor Type: General Purpose

RoHS: Yes