Datasheet BFG198,115 - NXP TRANS NPN 10 V 8 GHz SOT223 — Ficha de datos

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Manufacturer: NXP

Description: TRANS NPN 10 V 8 GHz SOT223

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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG198 NPN 8 GHz wideband transistor
Product specification 1995 Sep 12
NXP Semiconductors

Specifications:

• Collector Emitter Voltage V(br)ceo: 10 V
• Current Ic Continuous a Max: 50 mA
• DC Collector Current: 100 mA
• DC Current Gain Min: 40
• DC Current Gain: 90
• Gain Bandwidth ft Typ: 8 GHz
• Mounting Type: SMD
• Number of Pins: 3
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-223
• Power Dissipation: 1 W
• SVHC: No SVHC (19-Dec-2011)
• Transistor Case Style: SOT-223
• Transistor Polarity: NPN
• Transistor Type: RF Wideband
• Transition Frequency Typ ft: 8 GHz

RoHS: Yes

Otros nombres:

BFG198115, BFG198 115