Datasheet NTE46 - NTE Electronics BIPOLAR TRANSISTOR, NPN, 100 V — Ficha de datos

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Manufacturer: NTE Electronics

Description: BIPOLAR TRANSISTOR, NPN, 100 V

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Docket:
NTE46 Silicon NPN Transistor Darlington, General Purpose Amplifier, Preamp, Driver
Absolute Maximum Ratings: Collector­Emitter Voltage, VCES .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector­Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter­Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C Total Device Dissipation (TC = +25°C), PD . . . . . . . .

Specifications:

• Collector Emitter Voltage V(br)ceo: 100 V
• DC Collector Current: 500 mA
• DC Current Gain Max (hfe): 10000
• Power Dissipation Pd: 625 mW
• Transistor Polarity: NPN
• Transition Frequency Typ ft: 200 MHz