Datasheet NTE384 - NTE Electronics BIPOLAR TRANSISTOR, NPN, 350 V — Ficha de datos

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Manufacturer: NTE Electronics

Description: BIPOLAR TRANSISTOR, NPN, 350 V

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Docket:
NTE384 Silicon NPN Transistor High Voltage Power Amp/Switch
Description: The NTE384 is a multiple epitaxial silicon NPN power transistor in a TO66 type package utilizing a multiple­emitter site structure.

Multiple­epitaxial construction maximizes the volt­ampere characteristic of the device and provides fast switching speeds. Multiple­emitter design ensures uniform current flow throughout the structure, which produces a high IS/b and a large safe­operation­area. The NTE384 is characterized for use in inverters operating directly from a rectified 110V power line. The leakage current is specified at 450V; therefore the device can also be used in a series bridge configuration on a 220V line. The VEBO rating of 9V eases requirements on the drive transformer in inverter applications. Features: D Maximum Safe­Area­of­Operation D Low Saturation Voltages D High Voltage Rating: VCER(sus) = 375V D High Dissipation Rating: PT = 45W Absolute Maximum Ratings: Collector­Base Voltage, VCBO . . . . .

Specifications:

• Collector Emitter Voltage V(br)ceo: 350 V
• DC Collector Current: 7 A
• DC Current Gain Max (hfe): 28
• Operating Temperature Range: -65°C to +200°C
• Power Dissipation Pd: 45 W
• Transistor Polarity: NPN

RoHS: Yes