Datasheet NTE2347 - NTE Electronics BIPOLAR TRANSISTOR, NPN, 80 V, TO-39 — Ficha de datos
Part Number: NTE2347
Descripción detallada
Manufacturer: NTE Electronics
Description: BIPOLAR TRANSISTOR, NPN, 80 V, TO-39
Docket:
NTE2347 Silicon NPN Transistor General Purpose, Medium Power
Description: The NTE2347 is a silicon NPN transistor in a TO39 type package designed for use in high current, fast switching applications and for power amplifiers.
Absolute Maximum Ratings: CollectorBase Voltage (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V CollectorEmitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V EmitterBase Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Total Power Dissipation, Ptot TA +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W TC
Specifications:
- Collector Emitter Voltage V(br)ceo: 80 V
- DC Collector Current: 5 A
- DC Current Gain Max (hfe): 40
- Power Dissipation Pd: 1 W
- Transistor Polarity: NPN
- Transition Frequency Typ ft: 50 MHz
RoHS: Yes